Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824835
Reference32 articles.
1. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
2. Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells
3. Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates
4. Coherency and Semi-coherency
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