Vacancy induced anomalies in the electrical transport properties of Ag-doped Zn1−xCdxSb (x = 0.375) solid solutions
Author:
Affiliation:
1. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, India
2. High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077175
Reference21 articles.
1. M. Telkes , U.S. patent 2,366,881 (9 January 1945).
2. Physical Properties of Several II-V Semiconductors
3. Thermal and Electronic Transport Properties ofp-Type ZnSb
4. X. Song and T. G. Finstad , in Thermoelectrics for Power Generation: A Look at Trends in the Technology, edited by S. Skipidarov and M. Nikitin ( Books on Demand, 2016), pp. 119–147.
5. New Interest in Intermetallic Compound ZnSb
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1. Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping;Journal of Alloys and Compounds;2024-11
2. Enhanced Thermoelectric Performance in Zn1–xCdxSb (x = 0–0.375) Solid Solutions by Dynamic Optimization of Charge Carrier Concentration;ACS Applied Energy Materials;2022-09-21
3. Thermoelectric materials science and technology toward applications;Applied Physics Letters;2022-08-15
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