Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1400077
Reference12 articles.
1. Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories
2. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films
3. Pulsed laser ablation synthesis and characterization of layered Pt/SrBi2Ta2O9/Pt ferroelectric capacitors with practically no polarization fatigue
4. Characterization of Ferroelectric SrBi2Ta2 O 9 Thin Films Deposited by a Radio Frequency Magnetron Sputtering Technique
5. Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition
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1. Ferroelectric properties and piezoresponse force micoroscopy study of Bi3TaTiO9 thin films;Ultramicroscopy;2019-01
2. Effects of Bi2O3, TiO2, and Bi4Ti3O12 Seeding Layers on the Structural and Electrical Properties of Bi3.25La0.75Ti3O12 Thin Films Grown by a Sol–Gel Method;Journal of Electronic Materials;2015-05-14
3. Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique;Applied Physics A;2012-05-23
4. Photochemical-induced self-seeding effect on lead zirconate titanate thin film;Journal of Materials Chemistry;2011
5. Seeding Effect by Off-Stoichiometric SrBi[sub 2]Ta[sub 2x]O[sub 9] Thin Buffer Layer on the Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films;Journal of The Electrochemical Society;2010
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