Enhanced resistance switching in ultrathin Ag/SrTiO3/(La,Sr)MnO3 memristors and their long-term plasticity for neuromorphic computing
Author:
Affiliation:
1. College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
2. College of Computer Science and Technology, Qingdao University, Qingdao 266071, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Taishan Scholar Project of Shandong Province
Youth Innovation Team Project of Shandong Provincial Education Department
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0053107
Reference43 articles.
1. The future of electronics based on memristive systems
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