Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack-Reference-Cited by-同舟云学术

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

Published:2015-10-07 Issue:13 Volume:118 Page:134504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mikhelashvili V.¹²^ORCID,Padmanabhan R.¹²,Meyler B.¹,Yofis S.¹,Atiya G.²³,Cohen-Hyams Z.²³,Weindling S.¹,Ankonina G.²⁴,Salzman J.¹^ORCID,Kaplan W. D.²³,Eisenstein G.¹²

Affiliation:

1. Electrical Engineering Department, Technion, Haifa 3200, Israel

2. Russell Berrie Nanotechnology Institute, Technion, Haifa 3200, Israel

3. Department of Material Science and Engineering, Technion, Haifa 3200, Israel

4. Photovoltaic Laboratory, Technion, Haifa 3200, Israel

Funder

INNI-Israel National Nanotechnology Initiative

Kidron Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932031

Reference44 articles.

1. A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2. Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

3. A silicon nanocrystals based memory

4. Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications

5. Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

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