A high-k Y2O3 charge trapping layer for nonvolatile memory application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919086
Reference15 articles.
1. A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed
2. Long-Term Electron Leakage Mechanisms Through ONO Interpoly Dielectric in Stacked-Gate EEPROM Cells
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4. Room temperature operation of a quantum-dot flash memory
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2. Impacts of HfO2/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors;IEEE Journal of the Electron Devices Society;2019
3. Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory;Nanomaterials;2018-10-08
4. Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer;ACS Applied Materials & Interfaces;2018-05-07
5. The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics;Ceramics International;2017-02
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