Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1977185
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1. GaN Bipolar Junction Transistors with Regrown Emitters
2. Solar-blind AlGaN photodiodes with very low cutoff wavelength
3. High electron mobility AlGaN/GaN heterostructure on (111) Si
4. Defect Donor and Acceptor in GaN
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