High-speed STT MRAM incorporating antiferromagnetic layer
Author:
Affiliation:
1. Electrical and Computer Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, Pennsylvania 15213, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5078525
Reference12 articles.
1. Device implications of spin-transfer torques
2. Calculations of Exchange Bias in Thin Films with Ferromagnetic/Antiferromagnetic Interfaces
3. Random-field model of exchange anisotropy at rough ferromagnetic-antiferromagnetic interfaces
4. Ultrafast switching of antiferromagnets via spin-transfer torque
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