Band alignment and electron traps in Y2O3 layers on (100)Si-Reference-Cited by-同舟云学术

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Band alignment and electron traps in Y2O3 layers on (100)Si

Published:2009-09-28 Issue:13 Volume:95 Page:132903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang W. C.,Badylevich M.,Afanas’ev V. V.,Stesmans A.,Adelmann C.,Van Elshocht S.,Kittl J. A.,Lukosius M.,Walczyk Ch.,Wenger Ch.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3236536

Reference20 articles.

1. The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs

2. PolySi-SiO[sub 2]-ZrO[sub 2]-SiO[sub 2]-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO[sub 2] Charge Trapping Layer

3. Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer

4. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer

5. High ε gate dielectrics Gd2O3 and Y2O3 for silicon

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