Experimental investigation and modeling of the role of extended defects during thermal oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355306
Reference9 articles.
1. A study of point defect detectors created by Si and Ge implantation
2. Silicon interstitial absorption during thermal oxidation at 900 °C by extended defects formed via silicon implantation
3. Temperature and time dependence of B and P diffusion in Si during surface oxidation
4. A systematic analysis of defects in ion-implanted silicon
5. Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique
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