Band structure and density of states changes in heavily doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336939
Reference18 articles.
1. Infrared Absorption in Heavily Doped n-Type Si
2. Optical absorption in heavily doped silicon
3. The modification of electron energy levels by impurity atoms
4. Effect of ionized donors on the electron and hole densities of states in silicon
5. Effect of donor impurities on the conduction and valence bands of silicon
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2. Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy;MRS Bulletin;2001-10
3. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics;Journal of Applied Physics;2000-12-15
4. Ultrahigh B doping(<~1022cm−3)during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport;Physical Review B;2000-03-15
5. Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study;Physical Review Letters;1999-05-31
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