Barrier height enhancement of Schottky diodes onn‐In0.53Ga0.47As by cryogenic processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110607
Reference9 articles.
1. Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique
2. Schottky and field‐effect transistor fabrication on InP and GaInAs
3. Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation
4. Schottky contacts on n-In/sub 0.53/Ga/sub 0.47/As with enhanced barriers by counter-doped interfacial layers
5. Schottky barrier height enhancement onn‐In0.53Ga0.47As
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