Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors-Reference-Cited by-同舟云学术

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Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors

Published:2012-04-16 Issue:16 Volume:100 Page:163501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kang Ting-Kuo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704564

Reference15 articles.

1. Piezoresistance Effect in Germanium and Silicon

2. Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

3. Giant piezoresistance effect in silicon nanowires

4. K. Reck, J. Richter, O. Hansen, and E. V. Thomsen, in Proceedings of the 2008 IEEE Conference on Microelectromechanical Systems (IEEE, New York, 2008), p. 717.

5. Giant Piezoresistance Effects in Silicon Nanowires and Microwires

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