Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621078
Reference24 articles.
1. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
2. Dielectric property and thermal stability of HfO2 on silicon
3. Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O
4. The radiation response of the high dielectric-constant hafnium oxide/silicon system
5. Charge trapping in high k gate dielectric stacks
Cited by 108 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors;Journal of Applied Physics;2023-04-12
2. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023
3. Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics;Radiation Physics and Chemistry;2022-07
4. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack;ACS Applied Materials & Interfaces;2021-04-01
5. Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors;Materials Science and Engineering: B;2021-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3