Enhanced adhesion and performance of the source/drain electrode using a single-layered Ag(Cu) film for an amorphous silicon thin-film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621074
Reference14 articles.
1. Feasibility of an Ag-alloy film as a thin-film transistor liquid-crystal display source/drain material
2. Formation of aluminum oxynitride diffusion barriers for Ag metallization
3. Scaling properties and electromigration resistance of sputtered Ag metallization lines
4. Silver diffusion and defect formation in Si (1 1 1) substrate at elevated temperatures
5. Electrical transport in thin films of copper silicide
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1. Substrate interaction mediated control of phase separation in FIB milled Ag–Cu thin films;APL Materials;2024-01-01
2. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors;AIP Advances;2012-06
3. Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target;Journal of Electronic Materials;2011-09-02
4. Performance of Low Resistivity Electrode Prepared by Electroless Plated for Amorphous Silicon Thin-Film Transistors;Materials Science Forum;2007-10
5. High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes;IEEE Photonics Technology Letters;2007
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