In‐basedpohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104350
Reference5 articles.
1. Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation
2. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
3. High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors
4. Obtaining the specific contact resistance from transmission line model measurements
5. Models for contacts to planar devices
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1. Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2011-08
2. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
3. Amphoteric charge states and diffusion barriers of hydrogen in GaAs;Physical Review B;1999-02-15
4. Reduction of gap states of ternary III–V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05
5. Reliability issues for III-V heterojunction bipolar transistors;Microelectronics Reliability;1995-04
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