Author:
Lachkhab Chems El Ghizlane,Lakhdara Maya,Boulgheb Abdelaziz,Latreche Saida
Reference17 articles.
1. P. Chevalier, W. Liebl, H. Rucher, A. Gautier, D. Manger, B. Heinemann, G. Avenier and J. BÖck, “SiGe BiCMOS current status and future trends in Europe BiCMOS and compound Semiconductor Integred Circuits and Technologie Symposium, 2018.
2. TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS
3. Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
4. P. Chevalier et al, “55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT / 370 GHz fMAX HBT and High-Q Millimeter-Wave Passives”, Proceedings of the 2014 International Electron Devices Meeting (IEDM), San Francisco, CA (USA), 15-17 December 2014, pp. 77–79.
5. High-performance SiGe HBTs for next generation BiCMOS technology
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