Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer-Reference-Cited by-同舟云学术

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Published:2015-02-02 Issue:5 Volume:106 Page:051605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Shenghou¹^ORCID,Yang Shu¹,Tang Zhikai¹^ORCID,Jiang Qimeng¹,Liu Cheng¹^ORCID,Wang Maojun²,Shen Bo³,Chen Kevin J.¹

Affiliation:

1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

2. Institute of Microelectronics, Peking University, Beijing 100871, China

3. School of Physics, Peking University, Beijing 100871, China

Funder

NSFC/RGC joint research project

Innovation and Technology Commmission (ITF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907861

Reference23 articles.

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2. Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

3. Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT

4. High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

5. S. Ozaki , T. Ohki , M. Kanamura , T. Imada , N. Nakamura , N. Okamoto , T. Miyajima , and T. Kikkawa , in Proceedings of CS MANTECH Conference (2012), pp. 1–4, available at http://gaasmantech.com/Digests/2012/papers/11a.1.087.pdf.

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