Ultrafast carrier and phonon dynamics in few-layer 2H–MoTe2-Reference-Cited by-同舟云学术

Ultrafast carrier and phonon dynamics in few-layer 2H–MoTe2

Published:2019-09-21 Issue:11 Volume:151 Page:114704
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Chi Zhen¹²^ORCID,Chen Hailong²,Zhao Qing¹^ORCID,Weng Yu-Xiang²³^ORCID

Affiliation:

1. Center for Quantum Technology Research, School of Physics, Beijing Institute of Technology, Beijing 100081, China

2. Beijing National Laboratory for Condensed Matter Physics, CAS Key Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Strategic Priority Research Program of Chinese Academy of Sciences

Ministry of Science and Technology of the People’s Republic of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5115467

Reference53 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Single-Layer MoS2 Phototransistors

4. Single-layer MoS2 transistors

5. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

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