Lead free 0.9Na1/2Bi1/2TiO3–0.1BaZr0.2Ti0.8O3 thin film with large piezoelectric electrostrain

Author:

Yang Hao12,Zhao Jinyan1,Ren Wei1ORCID,Ye Zuo-Guang3ORCID,Vinayakumar K. B.2,Dias Rosana A.2,Pinto Rui M. R.2ORCID,Zhuang Jian1ORCID,Zhang Nan1ORCID

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China

2. International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal

3. Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada

Abstract

A sodium bismuth titanate-based thin film is widely investigated lead-free piezoelectrics with potential applications for modern micro-devices such as PiezoMEMS. In this work, a 0.9Na1/2Bi1/2TiO3–0.1BaZr0.2Ti0.8O3 thin film was deposited on a Pt/Ti/SiO2/Si (001) substrate by the sol–gel spin coating method. The deposited piezoelectric film shows low dielectric loss and high remnant polarization. The measured ferroelectricity loop showed a coercive field of 110 kV/cm and a saturation polarization of 46.83 μC/cm2. The piezoelectric response of this thin film does not decrease from room temperature to around 100 °C. The fabricated piezoelectric device with bottom and top electrodes showed a large macro-scale strain value of ∼4% under the DC (30 V) and AC voltages (f = 800 kHz, Vpp = 10 V).

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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