Be+/P+and Be+/As+dual implantations into AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99109
Reference8 articles.
1. Be‐ion implantation in AlxGa1−xAs
2. Ion implantation in compound semiconductors–an approach based on solid state theory
3. Dual implantation of Be+and F+in GaAs and AlxGa1−xAs
4. Rapid thermal annealing of Mg++As+dual implants in GaAs
5. Improved activation of Mg+and As+dual implants in GaAs by capless rapid thermal annealing
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1. High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing;Applied Physics Letters;2021-01-11
2. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
3. Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe;Applied Physics Letters;1997-07-21
4. Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure;Journal of Electronic Materials;1997-01
5. n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7);Journal of Applied Physics;1996-08-15
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