Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method
Author:
Affiliation:
1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
Funder
863 project
Guandong Natural Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/4/1.4919012.pdf?itemId=/content/aip/journal/adva/5/4/10.1063/1.4919012&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference15 articles.
1. Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
2. Fluorescent SiC and its application to white light-emitting diodes
3. White light-emitting diode based on fluorescent SiC
4. Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
5. Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
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