Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109787
Reference15 articles.
1. Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations
2. Low-pressure silicon epitaxy
3. Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
4. Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperatures
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2. A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature;Diamond and Related Materials;2001-11
3. Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh;Electronics Letters;1999
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