Thermal stability and contact degradation mechanisms of TaC ohmic contacts with W/WC overlayers ton-type 6H SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1407316
Reference10 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Recent progress in SiC-based device processing
3. A critical review of ohmic and rectifying contacts for silicon carbide
4. High‐temperature ohmic contact to n‐type 6H‐SiC using nickel
5. Contact resistivity of Re, Pt and Ta films on n-type β-SiC: Preliminary results
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