The study of 4H-SiC alpha particle detectors with different Schottky contact metallization
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http://aip.scitation.org/doi/pdf/10.1063/1.5048903
Reference13 articles.
1. http://www.ioffe.ru/SVA/NSM/Semicond/SiC/basic.html
2. A new generation of X-ray detectors based on silicon carbide
3. Silicon carbide for high resolution X-ray detectors operating up to 100°C
4. Characterisation of epitaxial SiC Schottky barriers as particle detectors
5. Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of the large sensitive area 4H-SiC Schottky detectors at the Back-n;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11
2. High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C;Applied Surface Science;2023-10
3. A study of the signal rising edge produced by a charge sensitive preamplifier connected to a 4H-SiC detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-05
4. Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer;APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019);2019
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