Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN∕GaN quantum well structures-Reference-Cited by-同舟云学术

Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN∕GaN quantum well structures

Published:2005 Issue:7 Volume:86 Page:071905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu S. J.,Wang Y. J.,Li Q.,Zhang X. H.,Liu W.,Chua S. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference14 articles.

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2. Blue Diode Lasers

3. Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

4. Giant ambipolar diffusion constant of n-i-p-i doping superlattices

5. Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer

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