Spatial distribution of 0.68‐eV emission from undoped semi‐insulating gallium arsenide revealed by high resolution luminescence imaging
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95544
Reference6 articles.
1. Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
2. Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging
3. Persistent photoluminescence quenching of 0.68‐eV emission in undoped semi‐insulating GaAs
4. Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging
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1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Sharp, Long Wavelength Cathodoluminescence Emission from Undoped Semi-insulating GaAs;Japanese Journal of Applied Physics;2006-10-06
3. Cathodoluminescence;Luminescence of Solids;1998
4. Photoenhancement and photoquenching of the 0.68-eVEL2 photoluminescence emission in GaAs grown by molecular-beam epitaxy at low temperatures;Physical Review B;1994-06-15
5. 0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures;Physical Review B;1994-02-15
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