High‐purity thermal treatment of silicon-Reference-Cited by-同舟云学术

High‐purity thermal treatment of silicon

Published:1981-03 Issue:3 Volume:52 Page:1603-1604
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Borchardt G.¹,Weber E.²,Wiehl N.³

Affiliation:

1. Institut für Theoretische Metallurgie, Technische Universität Clausthal, D‐3392 Clausthal‐Zellerfeld, and Sonderforschungsbereich 126, Göttingen/Clausthal, West Germany

2. II. Physikalisches Institut, Universität zu Köln, Abteilung für Metallphysik, D‐5000 Köln 41, West Germany

3. Institut für Kernchemie, Universität zu Köln, D‐5000 Köln, 41, West Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

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2. Y. H. Lee, R. L. Kleinhenz, and J. W. Corbett, Inst. Phys. Conf. Ser. 46, 52 (1979).IPHSAC0305-2346

3. J. A. Van Vechten and C. D. Thurmond, Phys. Rev. 14, 3551 (1976).

4. W. Frank, U. Gösele, M. J. Hill, M. Lietz, A. Seeger, and R. Sitti, Proceeding of the International Conference on Radiation Physics of Semiconductors and Related Materials, Tbilisi, 1979 (to be published).

5. L. Elstner and W. Kamprath, Phys. Status Solidi 22, 541 (1967).PHSSAK0031-8957

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