Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3684245
Reference4 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Time-resolved analysis of the set process in an electrical phase-change memory device
3. Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part I: Monte Carlo Model for Crystallization and Percolation
4. Phase change materials: From material science to novel storage devices
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1. Analysis of Intrinsic Variability in Phase-Change Memory Switching Originating from Stochastic Nucleation Using Fully Coupled Electrothermal and Phase-Field Models;ACS Applied Electronic Materials;2023-01-11
2. Enhancing the Performance of Phase Change Memory for Embedded Applications;physica status solidi (RRL) – Rapid Research Letters;2019-02-14
3. Ultrafast Nanoscale Phase-Change Memory Enabled By Single-Pulse Conditioning;ACS Applied Materials & Interfaces;2018-12-03
4. Positive dependence of thermal conductivity on temperature in GeTe/Bi2Te3 superlattices: the contribution of electronic and particle wave lattice thermal conductivity;Journal of Physics D: Applied Physics;2017-08-10
5. Sn2Se3: A conducting crystalline mixed valent phase change memory compound;Journal of Applied Physics;2017-06-14
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