Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736273
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1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
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