Dynamic characteristics of semi‐insulating current blocking layers: Application to modulation performance of 1.3‐μm InGaAsP lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341813
Reference10 articles.
1. Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers
2. InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD
3. High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers
4. High-speed, polyimide-based semi-insulating planar buried heterostructures
5. Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition
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1. Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP;Journal of Applied Physics;2001-01
2. Electrical conduction in annealed semi-insulating InP;Journal of Applied Physics;2000-04-15
3. Measurements on DFB lasers;Photonic Devices for Telecommunications;1999
4. High-frequency GaInAsP/InP laser mesas in (-110) direction with thick semi-insulating InP:Fe;IEEE Photonics Technology Letters;1993-10
5. Characterization of the dynamics of semiconductor lasers using optical modulation;IEEE Journal of Quantum Electronics;1992
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