N-type doping of Ge by As implantation and excimer laser annealing-Reference-Cited by-同舟云学术

N-type doping of Ge by As implantation and excimer laser annealing

Published:2014-02-07 Issue:5 Volume:115 Page:053501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Milazzo R.,Napolitani E.,Impellizzeri G.,Fisicaro G.,Boninelli S.,Cuscunà M.,De Salvador D.,Mastromatteo M.,Italia M.,La Magna A.,Fortunato G.,Priolo F.,Privitera V.,Carnera A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4863779

Reference24 articles.

1. Challenges and opportunities in advanced Ge pMOSFETs

2. Systematic study of shallow junction formation on germanium substrates

3. Ion-implantation issues in the formation of shallow junctions in germanium

4. Epitaxy of Deposited Si

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