Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341537
Reference12 articles.
1. Magnetospectroscopy of shallow donors in GaAs
2. Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy
3. Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition
4. Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
5. Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy
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2. The growth of GaAs/AlxGa1-xAs with DEA1H-NMe3 as Al source and MEAs and DMAAs as liquid As compounds;Journal of Crystal Growth;1994-12
3. Comparison of the As compounds tertiarybutylarsine and monoethylarsine;Journal of Crystal Growth;1992-11
4. Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane;Applied Physics Letters;1992-01-27
5. Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high‐purity, epitaxial GaAs;Journal of Applied Physics;1991-11
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