Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates-Reference-Cited by-同舟云学术

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Author:

Gallacher K.¹^ORCID,Ballabio A.²,Millar R. W.¹,Frigerio J.²,Bashir A.³,MacLaren I.³^ORCID,Isella G.²^ORCID,Ortolani M.⁴^ORCID,Paul D. J.¹^ORCID

Affiliation:

1. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

2. L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, Como I-22100, Italy

3. School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ, United Kingdom

4. Center for Life NanoScience@Sapienza, Istituto Italiano di Tecnologia, Viale Regina Elena 291, Rome I-00161, Italy

Funder

Engineering and Physical Sciences Research Council (EPSRC)

European Research Council (ERC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference21 articles.

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