Temperature dependence of the edge excitonic transitions of the wurtzite Cd1−x−yBexZnySe crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2115096
Reference24 articles.
1. Laser diodes based on beryllium-chalcogenides
2. Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates
3. Molecular beam epitaxy of Be-related II–VI compounds
4. Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range
5. Optical properties of laser diodes and heterostructures based on beryllium chalcogenides
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1. Prediction of optoelectronic properties for Be Zn Cd Se quaternary alloys :First-principles study;Optik;2019-12
2. Direct band gap nature and optical response of BexMgyZn1−(x+y)Se;Modern Physics Letters B;2016-01-28
3. Optical characterization of Zn0.35Cd0.44Mg0.21Se crystalline alloy by polarization-dependent contactless electroreflectance measurements;physica status solidi (c);2012-05-08
4. Temperature dependence of energies and broadening parameters of near band edge interband excitonic transitions in wurtzite ZnCdMgSe;Journal of Applied Physics;2010-09
5. Spectroscopic ellipsometry and photoluminescence investigation of Zn1-x-yBexMgySe and Cd1-x-yBexZnySe crystals;physica status solidi (a);2008-04
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