Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739733
Reference29 articles.
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5. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
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