Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356506
Reference14 articles.
1. Effect of the dislocation density on minority‐carrier lifetime in molecular beam epitaxial HgCdTe
2. Minority‐carrier lifetime inp‐type (111)BHgCdTe grown by molecular‐beam epitaxy
3. Minority carrier lifetime inn‐type Bridgman grown Hg1−xCdxTe
4. Recombination mechanisms in 8–14‐μ HgCdTe
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