Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2361178
Reference12 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain
3. Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment
4. Extended defects in shallow implants
5. Ostwald ripening of end-of-range defects in silicon
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