Ion channeling study of the lattice disorder in neutron irradiated GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371054
Reference19 articles.
1. Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs
2. Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique
3. Annealing effects on electrical properties of thermal neutron transmutation doped Ge
4. Electrical properties of neutron-transmutation-doped GaAs below 450 K
5. Doping of semi‐insulating andn‐type GaAs by neutron transmutation
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