Rutherford backscattering spectroscopy studies of ion transport in anodic oxides of Al/GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342819
Reference14 articles.
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3. Capacitance‐voltage characteristics of Al‐plasma anodic Al2O3‐GaAs diodes
4. Invited paper. Anodic oxides on GaAs. IV. Thin anodic oxides on GaAs
5. Discussion of “Control of Al2 O 3 Position in Anodic GaAs Native Oxide” [B. Bayraktaroglu, S. J. Hannah, and H. L. Hartnagel (pp. 958–959, Vol. 124, No. 6)]
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electromigration of Ga and Sb during anodization of Al/GaSb structures;Journal of Applied Physics;1990-09-15
2. Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation;physica status solidi (a);1990-04-16
3. Anodic oxidation of AlGaAs and detection of the AlGaAs‐GaAs heterojunction interface;Journal of Applied Physics;1990-03
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