Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775908
Reference19 articles.
1. III N V semiconductors for solar photovoltaic applications
2. Characteristics of non-annealed λ=1.35μm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy
3. Improvement of GaInNAs p‐i‐n photodetector responsivity by antimony incorporation
4. Deep-level defects in InGaAsN grown by molecular-beam epitaxy
5. A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n/sup +/-p HgCdTe photodiodes
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