Analysis of nonselective plasma etching of AlGaN by CF4∕Ar∕Cl2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1866490
Reference25 articles.
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4. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
5. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
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