Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4989805
Reference24 articles.
1. Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
2. The birth of topological insulators
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