Room‐temperature recombination of point defects produced in siliconp‐njunctions by light ion irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107198
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1. Ion beam induced transient amorphous nucleation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-01
2. Displacement Damage in Group IV Semiconductor Materials;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
3. Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-12
4. Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements;Applied Physics Letters;1998-12-07
5. Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects;MRS Proceedings;1998
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