p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio-Reference-Cited by-同舟云学术

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Published:2015-02-09 Issue:6 Volume:106 Page:063905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Langer Fabian¹,Perl Svenja¹,Höfling Sven¹²,Kamp Martin¹

Affiliation:

1. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg D97074, Germany

2. SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom

Funder

Deutsches Zentrum für Luft- und Raumfahrt (German Centre for Air and Space Travel)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4909507

Reference20 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

3. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

4. Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells

5. Solar cell efficiency tables (version 41)

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