Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861159
Reference18 articles.
1. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
2. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
3. Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
4. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
5. Study of the valence band offsets between InAs and InAs 1-x Sb x alloys
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1. Demonstration of the long wavelength InAs/InAsSb type-II superlattice based methane sensor;Sensors and Actuators A: Physical;2021-12
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3. Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes;Journal of Crystal Growth;2017-11
4. Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices;Journal of Electronic Materials;2017-07-07
5. Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures;SPIE Proceedings;2017-01-27
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