Enhanced stability of deuterium in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121640
Reference17 articles.
1. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
2. Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors
3. STM-induced H atom desorption from Si(100): isotope effects and site selectivity
4. Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)
5. Improved stability against light exposure in amorphous deuterated silicon alloy solar cell
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3. Determination of localized surface phonons in nanocrystalline silicon by inelastic neutron scattering spectroscopy and its application to deuterium isotope enrichment;Physical Review Materials;2021-06-28
4. New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges;Microelectronics Reliability;2018-08
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