Nitride-based high electron mobility transistors with a GaN spacer-Reference-Cited by-同舟云学术

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Nitride-based high electron mobility transistors with a GaN spacer

Published:2006-08-14 Issue:7 Volume:89 Page:073508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Palacios T.,Shen L.,Keller S.,Chakraborty A.,Heikman S.,DenBaars S. P.,Mishra U. K.,Liberis J.,Kiprijanovic O.,Matulionis A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2335514

Reference15 articles.

1. 30-W/mm GaN HEMTs by Field Plate Optimization

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. Proceedings of the International Electron Device Meeting;Palacios T.,2005

4. Design of high electron mobility devices with composite nitride channels

5. Fast and Ultrafast Processes in AlGaN/GaN Channels

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3. Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy;Journal of Physics D: Applied Physics;2023-05-19

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