Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations-Reference-Cited by-同舟云学术

Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations

Published:2018-07-16 Issue:3 Volume:113 Page:032108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohmagari Shinya¹,Yamada Hideaki¹,Tsubouchi Nobuteru¹,Umezawa Hitoshi¹,Chayahara Akiyoshi¹,Tanaka Shingo²,Mokuno Yoshiaki¹

Affiliation:

1. Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

2. Research Institute of Electrochemical Energy (RIECEN), National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040658

Reference28 articles.

1. High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance

2. Concepts for diamond electronics

3. Single crystal diamond wafers for high power electronics

4. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C

5. Power diamond vertical Schottky barrier diode with 10 A forward current

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