Infrared dielectric response function of strained In1−xGaxAs/InP epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506006
Reference16 articles.
1. Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering
2. Effect of clusters on long‐wavelength optical phonons in Ga1−xInxAs
3. Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy
4. Phonon mode study of near‐lattice‐matched InxGa1−xAs using micro‐Raman spectroscopy
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3. Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in In1−xGaxAs;Journal of Applied Physics;2007-06
4. Phonons in strained In1−xGaxAs∕InP epilayers characterized by infrared reflectance;Applied Physics Letters;2005-05-30
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